Design and Performance of Nitride-based UV LEDs
نویسندگان
چکیده
In this paper, we overview several of the critical materials growth, design and performance issues for nitride-based UV (< 400 nm) LEDs. The critical issue of optical efficiency is presented through temperature-dependent l]ilotoiull~inesccncc studies of various IJV active regions. These studies demonstrate enhanced optical efficiencies for active regions with Incontaining alloys ( InGrN, AIInGaN). we discuss the trade-off between the challenging growth of high Al containing alloys (AIGaN. AIGaInN). and the need for sufficient carrier confinement in W heterostructures. carrier leakage for various \– >. composition AIGaN barriers is examined through a calculation of the total unconfined system. We compare the performance of two distinct W LED structures: GaN/AIGaN emission, and InGaN/AIGaInN quantum well LEDs for 370 nm< 2.<390 nm emission.
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